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ST 2SB1116 / 2SB1116A
PNP Silicon Epitaxial Planar Transistor
Audio frequency power amplifier and medium speed switching.
The transistor is subdivided into three groups, Y, G and L, according to its DC current gain.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range 2SB1116 2SB1116A 2SB1116 2SB1116A
Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot Tj TS
Value 60 80 50 60 6 1 2 0.75 150 - 55 to + 150
Unit V V V A A W
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 2 V, -IC = 0.1 A at -VCE = 2 V, -IC = 1 A Collector Cutoff Current at -VCB = 60 V Emitter Cutoff Current at -VEB = 6 V Collector Emitter Saturation Voltage at -IC = 1 A, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 1 A, -IB = 50 mA Base Emitter On Voltage at -VCE = 2 V, -IC = 50 mA Gain Bandwidth Product at -VCE = 2 V, -IC = 100 mA Y G L Symbol hFE hFE hFE hFE -ICBO -IEBO -VCE(sat) -VBE(sat) -VBE(on) fT Min. 135 200 300 81 0.6 70 Max. 270 400 600 100 100 0.4 1.2 0.7 Unit nA nA V V V MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 10/11/2006
ST 2SB1116 / 2SB1116A
Figure 5. Power Derating
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 10/11/2006

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